डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1N8024-GA | High Temperature Silicon Carbide Power Schottky Diode 1N8024-GA
High Temperature Silicon Carbide Power Schottky Diode
Features
1200 V Schottky rectifier 250°C maximum operating temperature Electrically isolated base-plate Zero reverse recovery ch |
GeneSiC |
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1N8024-GA | High Temperature Silicon Carbide Power Schottky Diode | GeneSiC |
www.DataSheet.in | 2017 | संपर्क |