1N60P डाटा शीट PDF( Datasheet )

UNISONIC TECHNOLOGIES CO., LTD 1N60P 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, lo

1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junction, majority carrier conduction ● High current capability

1N60, 1N60P Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics · S

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance Germanium Glass Diode 1N60/1N60P DO-7 Mechanical Data Case: Terminals: Polarity: Weight: DO-7, molded glass Plated axial lead, so

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  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High Reliability • Low Reverse Current and Low Forward Voltage 1N60 1N60