1N5820 डाटा शीट PDF( Datasheet )

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5820/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State�

SMD Type Schottky Diodes 1N5820 ~ 1N5822 Diodes ■ Features ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● Guardring for overvoltage

1N5820 Series Power Diodes - Schottky 3A Axial DO-201AD Features: • Low forward voltage drop. • High current capability. • High reliability. • High surge current capability. Mechanical Data: Cases Le

www.vishay.com 1N5820, 1N5821, 1N5822 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-201AD PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 3.0 A 20 V, 30 V, 40 V 80 A 0.475

1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

MCC Features • • • • Low Switching Noise Low Forward Voltage Drop High Current Capability High Surge Current Capability
          !"#

1N5820~1N5822 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volts CURRENT 3.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy