डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1N5819 | Low drop power Schottky rectifier 1N5817, 1N5818, 1N5819
Low drop power Schottky rectifier
Features
■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capab |
STMicroelectronics |
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1N5819 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
1N5817; 1N5818; 1N5819 Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 03
Philips Semiconductors
Product specificatio |
NXP |
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1N5819 | SCHOTTKY BARRIER RECTIFIERS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 1N5817/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the� |
MotorolaInc |
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1N5819 | 1.0A SCHOTTKY BARRIER RECTIFIER Pb
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for Transient Protection Low-Power Loss, High Efficiency High-Surge Capability High-Current Capability |
Diodes |
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1N5819 | Schottky Barrier Rectifiers www.vishay.com
1N5817, 1N5818, 1N5819
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
DO-41 (DO-204AL)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max. Package
1.0 A 20 V, 30 V, 40 V
25 |
Vishay Siliconix |
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1N5819 | SCHOTTKY BARRIER RECTIFIERS 1N5817~1N5819
SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volt CURRENT
1 Ampere
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Mol |
PAN JIT |
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1N5819 | 1.0A SCHOTTKY BARRIER DIODE ®
WON-TOP ELECTRONICS
Features
Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 25A Peak Low Power Loss, High Efficiency Ideally Suited for Use in |
WON-TOP |
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