1N5817 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the�

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specificatio

1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capab

www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 1.0 A 20 V, 30 V, 40 V 25

Pb 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features  Guard Ring Die Construction for Transient Protection  Low-Power Loss, High Efficiency  High-Surge Capability  High-Current Capability

SCHOTTKY RECTIFIER Bulletin PD-20646 rev. C 11/04 1N5817 1.0 Amp Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF @1 Apk, TJ = 25°C

1N5817 - 1N5819 — Schottky Barrier Rectifier November 2010 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high