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1N5712 | Schottky Barrier Diodes 1N5711, 1N5712, 5082-2800 Series
Schottky Barrier Diodes for General Purpose Applications
Data Sheet
Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which us |
Avago |
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1N5712 | SCHOTTKY RECTIFIERS 1N5711, 1N5712 & 1N6263
High-reliability discrete products and engineering services since 1977
SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX leve |
Digitron Semiconductors |
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1N5712 | General Purpose Schottky Diodes General Purpose Schottky Diodes
FEATURES
Fast switching-PSEC High breakdown voltage Low cost - H-P equivalents
ENVIRONMENTAL RATINGS
(Maximum) Operating Temperature. - - - - - - - -65°C to+200°C Storage Temp |
M-Pulse Microwave |
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1N5712 | DIODE Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = Max. Power D |
DSI |
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1N5712 | Schottky Barrier Diodes Schottky Barrier Diodes for General Purpose Applications
Technical Data
1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Swit |
Agilent |
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1N5712 | Small Signal Schottky Diodes Features
Metal-to-silicon junction High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range
Mechanic |
LGE |
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1N5712 | General Purpose Axial Lead Glass Packaged Schottky Diodes 1N5711, 1N5712, MADS-005711, MADS-005712
General Purpose Axial Lead Glass Packaged Schottky Diodes
Features
Low Reverse Leakage Current Low Forward Voltage Drop Pico second Switching Speed Off |
MA-COM |
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