1N17 डाटा शीट PDF( Datasheet )

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N17 THRU 1N19 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low

MCC Features • • • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 1N17 THRU 1N19 1.0 Amp Schottky Barrier Rectifier 20 to 40 V

1N17 THRU 1N19 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere R-1 0.102 (2.6) 0.091 (2.3) DIA. 1.0 (25.4) MIN. 0.140(3.50) 0.114(2.90) 0.025 (0.65) 0.021 (0.55) DIA.

1N17 THRU 1N19 MINIATURE SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE: 20 to 40 VOLTS FORWARD CURRENT: 1.0 AMPERE FEATURES · High current capability · Low power loss, high efficiency · Low leakage · Low

BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIERS 1N17---1N19 VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low

1N17 ~ 1N19 SCHOTTKY BARRIER RECTIFIERS Reverse Voltage – 20 to 40 Volts Forward current – 1.0 Amperes Features R-1 • Metal silicon junction, majority carrier conduction • Low power loss, high effici

1N17-1N19 Schottky Barrier Rectifiers VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A Features Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High s