डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1N1190R | Silicon Standard Recovery Diode Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. |
GeneSiC |
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1N1190R | Silicon Standard Recovery Diode Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
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America Semiconductor |
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1N1190R | DIODE Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 8.3 ms Max. |
DSI |
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1N1190R | Standard Recovery Diode Naina Semiconductor Ltd.
1N1187 thru 1N1190R
Standard Recovery Diode, 35A
Features
Glass passivated die Low forward voltage drop High surge capability Low leakage current Normal and Revers |
Naina Semiconductor |
www.DataSheet.in | 2017 | संपर्क |