डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
15N60 | N-Channel Mosfet Transistor isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.44Ω(Max) ·High Switching Speed ·Minimu |
Inchange Semiconductor |
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15N60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 15N60
15 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
Preliminary
Power MOSFET
The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide cost |
Unisonic Technologies |
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15N60C3 | Power Transistor SPP15N60C3, SPI15N60C3 SPA15N60C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax RDS(on) ID
• Periodic avalanche rated
PG-TO220FP |
Infineon |
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15N60DM6 | N-Channel MOSFET STL15N60DM6
Datasheet
N-channel 600 V, 295 mΩ typ., 8.5 A, MDmesh DM6 Power MOSFET in a PowerFLAT 5x6 HV package
1 2 3 4 PowerFLAT 5x6 HV D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
AM15540v7
Features
Order code
VDS
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STMicroelectronics |
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15N60HS | High Speed IGBT SGB15N60HS
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High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V |
Infineon |
www.DataSheet.in | 2017 | संपर्क |