12N65 डाटा शीट PDF( Datasheet )

SEMICONDUCTOR I2N65 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 650Volts DESCRIPTION The Nell 12N65 is a three-terminal silicon device with current conduction capability of 12A, fast

12N65(F,B,H) 12A mps,650 Volts N-CHANNEL MOSFET FEATURE  12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-2

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N65 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V (Min) ·Static Drain-Source On-Resis

12A, 650V, N沟道 场效应晶体管 产品参数规格书 工业型号 FQP12N65C FQPF12N65C 公司型号 H12N65P H12N65F 通俗命名 12N65 H HAOHAI 封装标识 P: TO-220AB F: TO-220FP 包装方式 �

UNISONIC TECHNOLOGIES CO., LTD 12N65 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s pro

R SEMICONDUCTOR FEATURES ● RDS(ON)<0.85Ω@VGS=10V ● Fast switching capability ● Low gate charge ● Lead free in compliance with EU RoHS directive. MECHANICAL DATA ● Case:TO-220,ITO-220,TO-262,TO-263 Pa

UNISONIC TECHNOLOGIES CO., LTD 12N65-ML 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65-ML is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics,