12N60C डाटा शीट PDF( Datasheet )

HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GES VGEM I C25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFET

HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES = IC25 = =VCE(sat) tfi(typ) = 600 24 2.7 55 V A V ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ