12N50 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·Fast Switching ·Minimum Lot-

UNISONIC TECHNOLOGIES CO., LTD 12N50 Preliminary Power MOSFET 12 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION TO-220 The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced techno

UNISONIC TECHNOLOGIES CO., LTD 12N50-CB Preliminary 12A, 500V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 12N50-CB is a N-channel mode power MOSFET using UTC’s advanced technology to prov

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 48 12 15 Single TO-220AB TO-

FDP12N50F / FDPF12N50FT N-Channel MOSFET December 2007 UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Ty

UNISONIC TECHNOLOGIES CO., LTD 12N50K-MT 12A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N50K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar s

FDP12N50 / FDPF12N50T — N-Channel UniFETTM MOSFET FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features • RDS(on) = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ.