डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
11ES1 | DIODE DIODE Type : 11ES1
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package
Available
OUTLINE DRAWING
Maximum Rati |
Nihon Inter Electronics |
|
11ES1 | SILICON RECTIFIER DIODES www.eicsemi.com
11ES1 - 11ES2
SILICON RECTIFIER DIODES
PRV : 100 - 200 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Lo |
EIC |
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