डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
11E6 | SILICON RECTIFIER DIODES www.eicsemi.com
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / |
EIC |
|
11EQS04 | Low Forward Voltage Drop Diode | Nihon Inter Electronics |
|
11ES2 | DIODE | Nihon Inter Electronics |
|
11EFS2 | Low Forward Voltage drop Diode | Nihon Inter Electronics |
|
11E2 | DIODE | Nihon Inter Electronics |
|
11EQS03L | Low Forward Voltage drop Diode | Nihon Inter Electronics |
|
11EQS06 | Low Forward Voltage drop Diode | Nihon Inter Electronics |
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11EQ04 | Schottky Barrier Diode | Nihon Inter Electronics |
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11EFS4 | Low Forward Voltage drop Diode | Nihon Inter Electronics |
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11E1 | DIODE | Nihon Inter Electronics |
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11ES4 | Low Forward Voltage Drop Diode | Nihon Inter Electronics |
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