10N80 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) ·100% avalanche tested ·Mini

UNISONIC TECHNOLOGIES CO., LTD 10N80 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate char

SEMICONDUCTOR 10N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 10A, 800Volts DESCRIPTION The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast

UNISONIC TECHNOLOGIES CO., LTD 10N80-CQ 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80-CQ provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable

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FQA10N80C 800V N-Channel MOSFET FQA10N80C 800V N-Channel MOSFET Features • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 15pF) • Fast switching • 100