10N60B डाटा शीट PDF( Datasheet )

10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-

SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com pl