डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
10N12 | N-Channel MOSFET isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·SOA is Power-Dissipation L |
INCHANGE |
|
10N120BND | HGTG10N120BND Data Sheet
HGTG10N120BND
December 2001
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gate |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |