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EGP20K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Glass Passivated High Efficient Plastic Rectifiers - Taiwan Semiconductor

भाग संख्या EGP20K
समारोह Glass Passivated High Efficient Plastic Rectifiers
मैन्युफैक्चरर्स Taiwan Semiconductor 
लोगो Taiwan Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=EGP20K?> डेटा पत्रक पीडीएफ

EGP20K pdf
RATINGS AND CHARACTERISTIC CURVES (EGP20A THRU EGP20K)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
3.0
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
2.0
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.5- TYPICAL REVERSE CHARACTERISTICS
100
Tj=1500C
10
1.0
0
0 25
50 75 100 125 150 175
AMBIENT TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
90
Tj=Tj max.
75 8.3ms Single Half Sine Wave
JEDEC Method
60
45
30
15
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
140
Tj=250C
120 f=1.0MHz
Vsig=50mVp-p
100
80
60
40
20
0
0.1
EGP20A-EGP20D
EGP20F-EGP20K
1 10
REVERSE VOLTAGE. (V)
100
1000
1 Tj=1250C
0.1 Tj=750C
0.01
Tj=250C
0.001
0
20
40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
PULSE WIDTH-300 S
1% DUTY CYCLE
10
Tj=1500C
1
Tj=250C
0.1
0.01
0.2 0.4
EGP20A-EGP20D
EGP20F EGP20K
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE. (V)
- 589 -

विन्यास 2 पेज
डाउनलोड[ EGP20K Datasheet.PDF ]


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