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DXTP19020DP5 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 20V PNP HIGH GAIN TRANSISTOR - Diodes

भाग संख्या DXTP19020DP5
समारोह 20V PNP HIGH GAIN TRANSISTOR
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
1 Page
		
<?=DXTP19020DP5?> डेटा पत्रक पीडीएफ

DXTP19020DP5 pdf
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current
Symbol
VCBO
VCEO
VECO
VEBO
IC
IB
ICM
A Product Line of
Diodes Incorporated
DXTP19020DP5
Value
-25
-20
-4
-7
-8
-1
-15
Unit
V
V
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation @ TA = 25°C (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4) @TA = 25°C
Power Dissipation @ TA = 25°C (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5) @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Notes:
4. Device mounted on FR-4 PCB, 2 oz. copper, minimum recommended pad layout.
5. Device mounted on FR-4 PCB, 2 oz. copper, collector pad dimensions 0.42inch2.
Value
1.3
96.1
3
41.7
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Collector Breakdown Voltage (Reverse Blocking)
Emitter-Base Breakdown Voltage (Reverse Blocking)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
DC Current Gain (Note 6)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)ECX
V(BR)ECO
V(BR)EBO
ICBO
IEBO
Min
-25
-20
-4
-4
-7
VCE(sat)
VBE(sat)
VBE(on)
hFE
300
200
45
Typ
-55
-50
-8.6
-8.6
-8.2
<1
<1
-40
-97
-115
-220
-1050
-930
450
290
70
25
Transition Frequency
Input Capacitance (Note 6)
Output Capacitance (Note 6)
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 6. Pulse Test: Pulse width 300μs. Duty cycle 2.0%.
fT
Cibo
Cobo
td
tr
ts
tf
176
⎯⎯
36
23
18.4
266
49.6
Max
50
0.5
-50
-47
-130
-145
-275
-1150
-1000
900
400
45
Unit
V
V
V
V
V
nA
μA
nA
mV
mV
mV
MHz
pF
pF
Test Condition
IC = -100μA
IC = -10mA
IE = -100μA, RBC < 1kor
0.25V > VCB > -0.25V
IE = -100μA
IE = -100μA
VCB = -25V
VCB = -25V, Tamb = 100 °C
VEB = -5.6V
IC = -1A, IB = -100mA
IC = -1A, IB = -10mA
IC = -2A, IB = -40mA
IC = -8A, IB = -800mA
IC = -8A, IB = -800mA
IC = -8A, VCE = -2V
IC = -100mA, VCE = -2V
IC = -2A, VCE = -2V
IC = -8A, VCE = -2V
IC = -15A, VCE = -2V
IC = -50mA, VCE = -10V,
f = 50MHz
VEB = -0.5V, f = 1MHz
VCB = -10V, f = 1MHz
ns IC = -1A, VCC = -10V,
IB1 = -IB2 = -50mA
PowerDI is a registered trademark of Diodes Incorporated.
DXTP19020DP5
Document number: DS32012 Rev. 3 - 2
2 of 5
www.diodes.com
March 2010
© Diodes Incorporated

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