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HAT1047RJ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon P-Channel Power MOS FET - Renesas

भाग संख्या HAT1047RJ
समारोह Silicon P-Channel Power MOS FET
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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HAT1047RJ pdf
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HAT1047R, HAT1047RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current HAT1047R
HAT1047RJ
Avalanche energy HAT1047R
HAT1047RJ
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
–30
±20
–14
–112
–14
–14
19.6
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
3. Value at Tch = 25°C, Rg 50
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Unit
V
V
A
A
A
A
mJ
W
°C
°C
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Rev.5.00, Aug.27.2003, page 2 of 9

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
HAT1047RSilicon P-Channel Power MOS FETRenesas Technology
Renesas Technology
HAT1047RJSilicon P-Channel Power MOS FETRenesas
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