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HAF2017 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOS FET - Renesas

भाग संख्या HAF2017
समारोह Silicon N-Channel Power MOS FET
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
1 Page
		
<?=HAF2017?> डेटा पत्रक पीडीएफ

HAF2017 pdf
HAF2017(L), HAF2017(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10µs, duty cycle 1%
2. Value at Tch = 25°C
Symbol
VDSS
VGSS
VGSS
ID
ID (pulse) Note1
IDR
PchNote2
Tch
Tstg
Rating
60
16
–2.5
20
40
20
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
W
°C
°C
Typical Operation Characteristics
Item
Input voltage
Input voltage
Input current (Gate non shut down)
Input current (Gate non shut down)
Input current (Gate non shut down)
Input current (Gate shut down)
Input current (Gate shut down)
Shutdown temperature
Gate operation voltage
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
VOP
Min
3.5
3.5
Typ
0.8
0.35
175
Max
1.2
100
50
1
12
Unit
V
V
µA
µA
µA
mA
mA
°C
V
(Ta = 25°C)
Test Conditions
Vi = 8V, VDS =0
Vi = 3.5V, VDS =0
Vi = 1.2V, VDS =0
Vi = 8V, VDS =0
Vi = 3.5V, VDS =0
Channel temperature
Rev.2.00, Apr.13.2004, page 2 of 8

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डाउनलोड[ HAF2017 Datasheet.PDF ]


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