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FX20ASJ-03F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-channel Power MOS FET - Renesas

भाग संख्या FX20ASJ-03F
समारोह P-channel Power MOS FET
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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<?=FX20ASJ-03F?> डेटा पत्रक पीडीएफ

FX20ASJ-03F pdf
FX20ASJ-03F
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Drain-source leakage current
Gate-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min.
–30
±20
–1.5
Typ.
–2.0
0.085
0.145
–0.85
8
500
100
80
6
8
40
15
–1.0
30
Max.
100
±10
–2.5
0.12
0.20
–1.2
–1.5
5.0
Unit
V
V
µA
µA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
(Tch = 25°C)
Test conditions
ID = 1 mA, VGS = 0 V
IG = ±100 µA, VDS = 0 V
VDS = –30 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
ID = –1 mA, VDS = –10 V
ID = –10 A, VGS = –10 V
ID = –2 A, VGS = – 4 V
ID = –10 A, VGS = –10 V
ID = –10 A, VDS = – 5 V
VDS = –10 V, VGS = 0 V,
f = 1MHz
VDD = –15 V, ID = –10 A,
VGS = –10 V,
RGEN = RGS = 50
IS = –10 A, VGS = 0 V
Channel to case
IS = –10 A, dis/dt = – 50 A/µs
Switching Time Measurement Circuit
Vin Monitor
RGEN
D.U.T.
Vout
Monitor
RL
RGS
VDD
Switching Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
REJ03G0248-0200 Rev.2.00 Dec 19, 2008
Page 2 of 3

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