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CR5AS-12 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Thyristor - Renesas

भाग संख्या CR5AS-12
समारोह Thyristor
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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<?=CR5AS-12?> डेटा पत्रक पीडीएफ

CR5AS-12 pdf
CR5AS-12
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
7.8
5
Surge on-state current
I2t for fusing
ITSM
90
I2t 33
Peak gate power dissipation
PGM
0.5
Average gate power dissipation
PG (AV)
0.1
Peak gate forward voltage
VFGM
6
Peak gate reverse voltage
VRGM
6
Peak gate forward current
IFGM
0.3
Junction temperature
Tj – 40 to +125
Storage temperature
Tstg – 40 to +125
Mass
— 0.26
Notes: 1. With gate to cathode resistance RGK = 220 .
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 88°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
2.0 mA Tj = 125°C, VRRM applied,
RGK = 220
Repetitive peak off-state current
IDRM
2.0 mA Tj = 125°C, VDRM applied,
RGK = 220
On-state voltage
VTM — — 1.8 V Tc = 25°C, ITM = 15 A,
instantaneous value
Gate trigger voltage
VGT — — 0.8 V Tj = 25°C, VD = 6 V, IT = 0.1 A
Gate non-trigger voltage
Gate trigger current
VGD 0.1 — — V Tj = 125°C, VD = 1/2 VDRM,
RGK = 220
IGT 1 — 100Note3 µA Tj = 25°C, VD = 6 V, IT = 0.1 A
Holding current
Thermal resistance
IH — 3.5 — mA Tj = 25°C, VD = 12 V,
RGK = 220
Rth (j-c)
— 3.0 °C/W Junction to caseNote2
Notes: 2. The measurement point for case temperature is at anode tab.
3. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50 40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 220 resistance between the gate and
cathode.
Rev.2.00, Apr.05.2005, page 2 of 7

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डाउनलोड[ CR5AS-12 Datasheet.PDF ]


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