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S-LP3415ELT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement-Mode MOSFET - LRC

भाग संख्या S-LP3415ELT1G
समारोह P-Channel Enhancement-Mode MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
1 Page
		
<?=S-LP3415ELT1G?> डेटा पत्रक पीडीएफ

S-LP3415ELT1G pdf
LESHAN RADIO COMPANY, LTD.
LP3415ELT1G , S-LP3415ELT1G
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Dynamic3)
BVDSS
RDS(on)
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
Rg
VGS = 0V, ID = -250uA
VGS = -1.8V, ID = -2A
VGS = -2.5V, ID = -4A
VGS = -4.5V, ID = -4A
VDS =VGS, ID = -250uA
VDS = -16V, VGS = 0V
VGS = ± 8V, VDS = 0V
VDS = 0V, f = 1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS =-10V, ID = -4A
VGS = -4.5V
VDD = -10V, RL = 2.5
ID = -1A, VGEN = -4.5V
RG = 3
VDS = -10V, VGS = 0V
f = 1.0 MHz
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = -1A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
3. Guaranteed by design; not subject to production testing
Min Typ Max Unit
-20 V
85.0
75.0 mΩ
60.0
-0.3 -1 V
-1 uA
±10 uA
6.5 Ω
4.59
2.14
2.51
965.2
1604
7716
3452
36.45
128.57
15.17
5.97
2.78
3.26
1930.4
3208
15432
6904
nC
ns
pF
-2.2 A
-1 V
Rev .O 2/3

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डाउनलोड[ S-LP3415ELT1G Datasheet.PDF ]


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