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LP3407LT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement-Mode MOSFET - LRC

भाग संख्या LP3407LT1G
समारोह P-Channel Enhancement-Mode MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
1 Page
		
<?=LP3407LT1G?> डेटा पत्रक पीडीएफ

LP3407LT1G pdf
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-4.1A
VGS=-4.5V, ID=-3A
Forward Transconductance
VDS=-5V, ID=-4A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3.6,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Min
-30
-1
-25
415
70
40
3.5
7.4
3.7
1.3
1.3
8.8
4
Typ Max Units
V
-1
-5
µA
±100 nA
-2 -3 V
A
70
95
m
100 m
10 S
-0.7 -1
V
-2 A
520 625
100 130
65 90
7.5 11.5
pF
pF
pF
9.2 11 nC
4.6 6 nC
1.6 1.9 nC
2.2 3.1 nC
7.5 ns
5.5 ns
19 ns
7 ns
11 13 ns
5.3 6.4 nC
Rev .O 2/6

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डाउनलोड[ LP3407LT1G Datasheet.PDF ]


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