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LP3401LT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement-Mode MOSFET - LRC

भाग संख्या LP3401LT1G
समारोह P-Channel Enhancement-Mode MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
1 Page
		
<?=LP3401LT1G?> डेटा पत्रक पीडीएफ

LP3401LT1G pdf
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
TJ=55°C
RDS(ON)
gFS
VSD
IS
VGS=-10V, ID=-4.2A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3.6,
tD(off)
Turn-Off DelayTime
RGEN=6
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Min
-30
-0.7
-25
7
Typ Max Units
-1
-5
±100
-1 -1.3
11
-0.75
70
80
120
-1
-2.2
V
µA
nA
V
A
m
m
m
S
V
A
954 pF
115 pF
77 pF
6
9.4 nC
2 nC
3 nC
6.3 ns
3.2 ns
38.2 ns
12 ns
20.2 ns
11.2 nC
Rev .O 2/5

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डाउनलोड[ LP3401LT1G Datasheet.PDF ]


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