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LP2301BLT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement-Mode MOSFET - LRC

भाग संख्या LP2301BLT1G
समारोह P-Channel Enhancement-Mode MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
1 Page
		
<?=LP2301BLT1G?> डेटा पत्रक पीडीएफ

LP2301BLT1G pdf
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
BVDSS
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
Gate Resistance
Rg
Forward Transconductance
Dynamic 3)
Total Gate Charge
gfs
Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
LESHAN RADIO COMPANY, LTD.
LP2301BLT1G
Test Condition
Min Typ Max Unit
VGS = 0V, ID = -250uA
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VDS =VGS, ID = -250uA
VDS = -9.6V, VGS = 0V
VGS = ±8V, VDS = 0V
-20
-0.40
VDS = -5V, ID = -4.0A
- -V
69 100 mΩ
83 150 mΩ
-0.90
V
-1 uA
±100
nA
Ω
6.5 S
VDS = -6V, ID = -2.8A
VGS = -4.5V
VDD = -6V, RL = 6Ω
ΙD = −1Α, VGEN = -4.5V
RG = 6Ω
VDS = -6V, VGS = 0V
f = 1.0 MHz
15.23
5.49
2.74
17.28
3.73
36.05
6.19
882.51
145.54
97.26
nC
ns
pF
IS = -0.75A, VGS = 0V
-2.4 A
-0.8 -1.2 V
Rev .O 2/5

विन्यास 5 पेज
डाउनलोड[ LP2301BLT1G Datasheet.PDF ]


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