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S-LNTS4409NWT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Small Signal MOSFET - LRC

भाग संख्या S-LNTS4409NWT1G
समारोह Small Signal MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
1 Page
		
<?=S-LNTS4409NWT1G?> डेटा पत्रक पीडीएफ

S-LNTS4409NWT1G pdf
LESHAN RADIO COMPANY, LTD.
LNTS4409NWT1G , S-LNTS4409NWT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 20 V
TJ = 25°C
TJ = 70°C
TJ = 125°C
VDS = 0 V, VGS = 8.0 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = 4.5 V, ID = 0.6 A
VGS = 2.7 V, ID = 0.2 A
VGS = 4.5 V, ID = 1.2 A
VDS = 5.0 V, ID = 0.5 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
VGS = 4.5 V, VDS = 15 V,
ID = 0.8 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 15 V,
ID = 0.7 A, RG = 51 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 0.6 A
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
25
0.5
Typ
30
−2.0
249
299
260
0.5
49
22.4
8.0
1.2
0.2
0.28
0.3
5.0
8.2
23
41
0.82
Max Unit
V
mV/°C
0.5 mA
2.0
5.0
3 uA
1.5 V
mV/°C
350 mW
400
S
60 pF
30
12
1.5 nC
0.50
0.40
12 ns
8.0
35
60
1.20 V
Rev .A 2/5

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