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S-LNTR4003NLT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Small Signal MOSFET - LRC

भाग संख्या S-LNTR4003NLT1G
समारोह Small Signal MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
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<?=S-LNTR4003NLT1G?> डेटा पत्रक पीडीएफ

S-LNTR4003NLT1G pdf
LESHAN RADIO COMPANY, LTD.
LNTR4003NLT1G , S-LNTR4003NLT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 100 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
40
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 30 V
TJ = 25°C
VDS = 0 V, VGS = ±10 V
1.0 mA
±1.0 mA
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)
VGS = VDS, ID = 250 mA
0.8
1.6 V
VGS(TH)/TJ
3.4 mV/°C
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 4.0 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
VDS = 3.0 V, ID = 10 mA
1.0 1.5
W
1.5 2.0
0.33 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = 5.0 V
VGS = 5.0 V, VDS = 24 V,
ID = 0.1 A
21
19.7 pF
8.1
1.15
0.15
nC
0.32
0.23
Turn−On Delay Time
td(on)
16.7
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 4.5 V, VDD = 5.0 V,
ID = 0.1 A, RG = 50 W
47.9
65.1
ns
Fall Time
tf
64.2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 mA
TJ = 125°C
Reverse Recovery Time
tRR VGS = 0 V, dIS/dt = 8A/ms,
IS = 10 mA
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
0.65 0.7 V
0.45
14 ns
Rev .O 2/5

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