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S-LNTK3043NT5G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - LRC

भाग संख्या S-LNTK3043NT5G
समारोह Power MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
1 Page
		
<?=S-LNTK3043NT5G?> डेटा पत्रक पीडीएफ

S-LNTK3043NT5G pdf
LESHAN RADIO COMPANY, LTD.
LNTK3043NT5G , S-LNTK3043NT5G
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient – Steady State (Note 3)
RqJA
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
RqJA
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Max
280
228
400
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Condition
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
VGS = 0 V, ID = 100 mA
ID = 100 mA, Reference to 25°C
V(BR)DSS
V(BR)DSS/TJ
20
27
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
VGS = 0 V,
VDS = 16 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±5 V
IDSS
IGSS
1
mA
10
1 mA
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
VGS = 4.5V, ID = 10 mA
VGS = 4.5V, ID = 255 mA
VGS = 2.5 V, ID = 1 mA
VGS = 1.8 V, ID = 1 mA
VGS = 1.65 V, ID = 1 mA
Forward Transconductance
VDS = 5 V, ID = 100 mA
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS(TH)
VGS(TH)/TJ
RDS(ON)
gFS
0.4 1.3
−2.4
1.5 3.4
1.6 3.8
2.4 4.5
5.1 10
6.8 15
0.275
V
mV/°C
W
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0 V, f = 1 MHz, VDS = 10 V
SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4)
CISS
COSS
CRSS
11
8.3 pF
2.7
Turn−On Delay Time
td(ON)
13
Rise Time
Turn−Off Delay Time
VGS = 4.5 V, VDD = 5 V, ID = 10 mA,
RG = 6 W
tr
td(OFF)
15
94
ns
Fall Time
tf 55
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VGS = 0 V, IS= 286 mA
TJ = 25°C
TJ = 125°C
Charge Time
Discharge Time
VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/ms,
IS = 286 mA
Reverse Recovery Charge
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
VSD
tRR
ta
tb
QRR
0.83 1.2
0.69
9.1
7.1
2.0
3.7
V
ns
nC
Rev .O 2/5

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