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LNTA7002NT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Small Signal MOSFET - LRC

भाग संख्या LNTA7002NT1G
समारोह Small Signal MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
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LNTA7002NT1G pdf
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
IDSS
VGS = 0 V, ID = 100 mA
VGS = 0 V, VDS = 30 V
VGS = 0 V, VDS = 20 V,
T = 85 °C
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
IGSS
IGSS
IGSS
VDS = 0 V, VGS = ±10 V
VDS = 0 V, VGS = ±5 V
VDS = 0 V, VGS = ±5 V
T = 85 °C
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CAPACITANCES
VGS(TH)
RDS(on)
gFS
VDS = VGS, ID = 100 mA
VGS = 4.5 V, ID = 154 mA
VGS = 2.5 V, ID = 154 mA
VDS = 3 V, ID = 154 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
VDS = 5.0 V, f = 1 MHz,
VGS = 0 V
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Drain−Source Diode Characteristics
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VDS = 5.0 V,
ID = 75 mA, RG = 10 W
Forward Diode Voltage
VSD VGS = 0 V, IS = 0.154 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
30
0.5
Typ Max Unit
V
1.0 mA
1.0 mA
±25 mA
±1.0 mA
±1.0 mA
1.0 1.5 V
1.4 7.0
W
2.3 7.5
80 mS
11.5
10 pF
3.5
13 ns
15
98 ns
60
0.77 0.9 V
Rev .O 2/5

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