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LNTA4001NT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Small Signal MOSFET - LRC

भाग संख्या LNTA4001NT1G
समारोह Small Signal MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
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LNTA4001NT1G pdf
LESHAN RADIO COMPANY, LTD.
LNTA4001NT1G , S-LNTA4001NT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 2)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = 100 mA
VGS = 0 V, VDS = 20 V
VDS = 0 V, VGS = ±10 V
20
1.0
±100
V
mA
mA
Gate Threshold Voltage
Drain-to-Source On Resistance
Forward Transconductance
CAPACITANCES
VGS(TH)
VDS = 3 V, ID = 100 mA
0.5 1.0 1.5 V
RDS(on)
VGS = 4.5 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
1.5 3.0
W
2.2 3.5
gFS VDS = 3 V, ID = 10 mA
50 mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
VDS = 5 V, f = 1 MHz,
VGS = 0 V
11.5 20
10 15 pF
3.5 6.0
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VDS = 5 V,
ID = 10 mA, RG = 10 W
13 ns
15
98 ns
60
Forward Diode Voltage
VSD VGS = 0 V, IS = 10 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
0.66 0.8 V
Rev .O 2/5

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