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RCR1525SI डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Field Effect Transistor - RCR

भाग संख्या RCR1525SI
समारोह P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स RCR 
लोगो RCR लोगो 
पूर्व दर्शन
1 Page
		
<?=RCR1525SI?> डेटा पत्रक पीडीएफ

RCR1525SI pdf
RCR1525SI
z Electrical Characteristics @TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = -250 µA
-30 --
Zero Gate Voltage Drain Current
IDSS VDS = -30 V, VGS = 0 V -- --
Gate - Body Leakage, Forward
IGSSF
VGS = +20 V, VDS = 0 V
-- --
Gate - Body Leakage, Reverse
IGSSR
VGS = -20 V, VDS = 0 V
ON CHARACTERISTICS (2)
-- --
Gate Threshold Voltage
VGS (th)
VDS = VGS, ID = -250 µA
-1 -1.4
Static Drain-Source On-Resistance
RDS(ON)
VGS = -4.5 V, ID = -3 A
VGS = -10 V, ID = -4.1 A
-- 90
-- 75
Forward Transconductance
gFS VDS = -5 V, ID = -2.8 A
DYNAMIC CHARACTERISTICS (3)
46
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = -6 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS (3)
-- 680
-- 72
-- 58
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD = -6 V, RL = 6Ω,ID = -1.0 A,
VGEN = -4.5 V,RG = 6Ω
VDD= -6 V, RL = 6Ω,ID = -1.0 A,
VGEN = -4.5 V,RG = 6Ω
--
---
--
--
--
--
--
--
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Current(4)
IS
-- -- --
Drain-Source Diode Forward Voltage(2)
VSD
VGS = 0 V, IS = -0.75 A
-0.6 -0.8
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test: PW300μs, duty cycle2%.
3. Guaranteed by design, not subject to production testing.
4. Surface Mounted on FR4 Board, t < 5 sec.
Max
--
-1
100
-100
-2.0
110
90
--
--
--
--
20
10
65
45
-1.35
-1.3
Unit
V
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
A
V
YKKJPD-V3.1
2/4

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डाउनलोड[ RCR1525SI Datasheet.PDF ]


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