DataSheet.in

C5195 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SC5195 - NEC

भाग संख्या C5195
समारोह 2SC5195
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=C5195?> डेटा पत्रक पीडीएफ

C5195 pdf
2SC5195
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
CONDITION
Collector Cutoff Current
ICBO VCB = 5 V, IE = 0
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain
Insertion Power Gain (1)
IEBO
hFE
|S21e|2
|S21e|2
VEB = 1 V, IC = 0
VCE = 1 V, IC = 3 mANote 1
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
VCE = 3 V, IC = 20 mA, f = 2.0 GHz
Noise Figure (2)
NF VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Noise Figure (1)
NF VCE = 3 V, IC = 7 mA, f = 2.0 GHz
Gain Bandwidth Product (2) fT VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Gain Bandwidth Product (1) fT VCE = 3 V, IC = 20 mA, f = 2.0 GHz
Collector Capacitance
Cre VCB = 1 V, IE = 0, f = 1.0 MHzNote 2
MIN.
80
3
4.5
TYP.
4
8
1.7
1.5
5
9.5
0.7
MAX.
100
100
160
2.5
0.8
UNIT
nA
nA
dB
dB
dB
dB
GHz
GHz
pF
Notes 1. Pulse Measurement: PW 350 µs, Duty cycle 2 %, Pulsed
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE Classification
Rank
Marking
hFE
FB
88
80 to 160
2

विन्यास 10 पेज
डाउनलोड[ C5195 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
C5191 2SC5191NEC
NEC
C51942SC5194NEC
NEC


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English