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STM6708 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics

भाग संख्या STM6708
समारोह N-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स SamHop Microelectronics 
लोगो SamHop Microelectronics लोगो 
पूर्व दर्शन
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<?=STM6708?> डेटा पत्रक पीडीएफ

STM6708 pdf
STM6708
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=7.5A
VGS=4.5V , ID=6.5A
VDS=10V , ID=7.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=30V,ID=7.5A,VGS=10V
VDS=30V,ID=7.5A,VGS=4.5V
VDS=30V,ID=7.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=3A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Min Typ Max Units
60 V
1 uA
±100 nA
1 1.6 3
V
8 10 m ohm
11 13.5 m ohm
21 S
4250
247
216
pF
pF
pF
57 ns
61 ns
173 ns
50 ns
55 nC
26 nC
4.5 nC
14 nC
0.76 1.3
V
Sep,05,2014
2 www.samhop.com.tw

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डाउनलोड[ STM6708 Datasheet.PDF ]


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