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T70RIA10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Medium Power Phase Control Thyristors - Vishay

भाग संख्या T70RIA10
समारोह Medium Power Phase Control Thyristors
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=T70RIA10?> डेटा पत्रक पीडीएफ

T70RIA10 pdf
T..RIA Series
Vishay High Power Products Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
T50RIA T70RIA T90RIA UNITS
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
50 70 90 A
70 70 70 °C
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
Maximum I2t for fusing
IT(RMS)
ITSM
I2t
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
100 % VRRM
reapplied
Sine half wave,
initial TJ = TJ maximum
80
1310
1370
1100
1150
8550
7800
6050
5520
110 141
1660 1780
1740 1870
1400 1500
1460 1570
13 860 15 900
12 650 14 500
9800 11 250
8950 10 270
A
A
A2s
Maximum I2t for fusing
I2t t = 0.1 to 10 ms, no voltage reapplied
85 500 138 500 159 100 A2s
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum
VT(TO)2 (I > π x IT(AV)), TJ maximum
rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum
rt2 (I > π x IT(AV)), TJ maximum
VTM
ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square
Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
VFM
ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square
Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
IH Anode supply = 6 V, initial IT = 30 A, TJ = 25 °C
Anode supply = 6 V, resistive load = 10 Ω
IL Gate pulse: 10 V, 100 µs, TJ = 25 °C
0.97 0.77 0.78
1.13 0.88 0.88
V
4.1 3.6 2.9
mΩ
3.3 3.2 2.6
1.60 1.55 1.55
V
1.60 1.55 1.55
V
200 200 200
mA
400 400 400
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgd
trr
tq
TEST CONDITIONS
TJ = 25 °C, Vd = 50 % VDRM, ITM = 50 A
Ig = 500 mA, tr 0.5, tp 6 µs
TJ = 125 °C, ITM = 50 A, tp = 300 µs, dI/dt = 10 A/µs
TJ = TJ maximum, ITM = 50 A, tp = 300 µs
-dI/dt = 15 A/µs, VR = 100 V, linear to 80 % VDRM
VALUES
0.9
3
110
UNITS
µs
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93756
Revision: 03-Jun-08

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