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STD102S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics

भाग संख्या STD102S
समारोह N-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स SamHop Microelectronics 
लोगो SamHop Microelectronics लोगो 
पूर्व दर्शन
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<?=STD102S?> डेटा पत्रक पीडीएफ

STD102S pdf
STU102S
STD102S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3A
VGS=4.5V , ID=2.7A
VDS=10V , ID=3A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=3A,VGS=10V
VDS=50V,ID=3A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Min Typ Max Units
100 V
1 uA
±100 nA
1 2.1 3
V
453 566 m ohm
544 734 m ohm
6.4 S
170 pF
22 pF
14 pF
6.6 ns
10 ns
14 ns
2 ns
3.5 nC
0.72 nC
1.4 nC
0.81 1.3
V
Jun,09,2014
2 www.samhop.com.tw

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डाउनलोड[ STD102S Datasheet.PDF ]


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