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FZT558 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP HIGH VOLTAGE TRANSISTOR - Diodes

भाग संख्या FZT558
समारोह PNP HIGH VOLTAGE TRANSISTOR
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=FZT558?> डेटा पत्रक पीडीएफ

FZT558 pdf
A Product Line of
Diodes Incorporated
FZT558
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-400
-400
-7
-200
Unit
V
V
V
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
2
3
62.5
41.7
19.41
-55 to +150
Unit
W
W
°C/W
C/W
°C/W
C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
Electrostatic Discharge - Machine Model
ESD MM
400 V
Notes:
5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 50mm x 50mm single sided 2oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
JEDEC Class
3A
C
FZT558
Document number: DS33139 Rev.4 - 2
2 of 7
www.diodes.com
February 2015
© Diodes Incorporated

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