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HCS60R180S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Super Junction MOSFET - SemiHow

भाग संख्या HCS60R180S
समारोह N-Channel Super Junction MOSFET
मैन्युफैक्चरर्स SemiHow 
लोगो SemiHow लोगो 
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<?=HCS60R180S?> डेटा पत्रक पीडीएफ

HCS60R180S pdf
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 10 A
2.8
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 600 V, VGS = 0 V
VDS = 480 V, TJ = 125
VGS = ρ20 V, VDS = 0 V
600
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 21 A,
RG = 25 Ÿ
VDS = 480 V, ID = 21 A
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 21 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 10 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
-- 4.2
0.15 0.18
-- --
-- 10
-- 100
-- ρ100
1850
500
9
0.54
--
--
--
--
45 --
40 --
140 --
25 --
46 --
12 --
16 --
-- 21
-- 63
-- 1.2
330 --
3.8 --
V
Ÿ
V
Ÿ
nC
nC
nC
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=6A, VDD=50V, RG=25:, Starting TJ =25qC
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