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2DC4617QLP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 50V NPN SMALL SIGNAL TRANSISTOR - Diodes

भाग संख्या 2DC4617QLP
समारोह 50V NPN SMALL SIGNAL TRANSISTOR
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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2DC4617QLP pdf
Absolute Maximum Ratings (@TA = +25°C unless otherwise specified.)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
ICM
2DC4617QLP
Value
50
50
5.0
100
200
Unit
V
V
V
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Thermal Resistance, Junction to Lead
(Note 7)
Operating and Storage and Temperature Range
Symbol
PD
RJA
RJL
TJ, TSTG
Value
400
1000
310
120
120
-55 to +150
Unit
mW
C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 9)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(SAT)
Cobo
fT
Min
50
50
5.0
120
100
Max
100
5
100
270
0.2
3.5
Unit
V
V
V
nA
A
nA
V
pF
MHz
Test Condition
IC = 50µA, IE = 0
IC = 1.0mA, IB = 0
IE = 50A, IC = 0
VCB = 30V
VCB = 30V, TA = +150°C
VEB = 4.0V
VCE = 6.0V, IC = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 12V, f = 1.0MHz, IE = 0
VCE = 12V, IC = 2.0mA,
f = 100MHz
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
2DC4617QLP
Document number: DS31439 Rev. 5 - 2
2 of 5
www.diodes.com
May 2015
© Diodes Incorporated

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2DC4617QLP50V NPN SMALL SIGNAL TRANSISTORDiodes
Diodes


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