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SXE1089Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - high performance pHEMT MMIC amplifier - RF Micro Devices

भाग संख्या SXE1089Z
समारोह high performance pHEMT MMIC amplifier
मैन्युफैक्चरर्स RF Micro Devices 
लोगो RF Micro Devices लोगो 
पूर्व दर्शन
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SXE1089Z pdf
SXE1089Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
Device Voltage (VD)
RF Input Power* (See Note)
170 mA
5.5 V
25 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1B
Moisture Sensitivity Level
MSL 2
*Note: Load condition ZL=50.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance with Application Circuit at Key Operating Frequencies (with Broadband Application Circuit)
Parameter
Unit 500 880 1570 1960 2140 2440 3000
MHz MHz MHz MHz MHz MHz MHz
Small Signal Gain (S21)
Output Third Order Intercept Point, 5dBm per
tone, 1MHz spacing (OIP3)
Channel Power at -65dBc (ACP1)
Output Power at 1dB Compression (P1dB)
Input Return Loss
Output Return Loss
Reverse Isolation (S12)
Noise Figure (NF)
dB
dBm
dBm
dBm
dB
dB
dB
dB
14.7
38.0
20.6
23.5
9.0
-21.0
3.2
14.2
38.0
13.2
22.4
13.5
13.0
-20.0
3.2
12.6
38.5
23.0
15.5
19.5
-18.5
3.2
11.7
38.5
22.9
19.0
24.0
-18.0
3.2
11.2
38.5
9.5
22.6
21.5
23.0
-17.5
3.2
10.5
38.5
22.3
31.5
18.5
-17.0
3.2
9.1
37.0
21.3
23.0
13.0
-16.0
3.4
Test Conditions: VD=5V IDQ=128mA Typ. ACP1=880MHz tested with IS-95 Ch. FWD
TL=25°C ZS=ZL=502140MHz tested with WCDMA 64 Ch. FWD
Note: OIP3 can be improved to 39-40dBm by lowering the output choke and/or increasing the output DC block. These changes will reduce
P1dB and ACPR.
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110610

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