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SPF5122Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - GaAs pHEMT LOW NOISE MMIC AMPLIFIER - RF Micro Devices

भाग संख्या SPF5122Z
समारोह GaAs pHEMT LOW NOISE MMIC AMPLIFIER
मैन्युफैक्चरर्स RF Micro Devices 
लोगो RF Micro Devices लोगो 
पूर्व दर्शन
1 Page
		
<?=SPF5122Z?> डेटा पत्रक पीडीएफ

SPF5122Z pdf
SPF5122Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lD)
Max Device Voltage (VD)
Max RF Input Power
120 mA
5.5 V
27 dBm
Max Dissipated Power
660 mW
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
150
-40 to + 85
-65 to +150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1B
Moisture Sensitivity Level (MSL)
MSL 1
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance - Broadband Application Circuit with VD=5V, ID=90mA
Parameter Unit 0.1 0.4 0.9 1.5 1.9 2.2 2.5 3.5
GHz* GHz GHz GHz GHz GHz GHz GHz
Small Signal Gain dB 27.0 24.0 19.0 15.0 13.0 12.0 11.0
6.0
Noise Figure
dB 0.42 0.47 0.59 0.70 0.64 0.73 0.86 1.35
Output IP3
dBm
33.0
36.0
38.0
39.5
40.5
41.0
41.5
40.5
Output P1dB
dBm
22.3
22.7
23.0
23.2
23.4
23.7
23.9
22.2
Input Return Loss
dB
-9.5
-10.0
-14.5
-20.0
-21.0
-22.0
-22.5
-15.0
Output Return Loss dB -29.0
-19.5
-17.0
-14.0
-13.0
-12.5
-12.5
-7.5
Reverse Isolation
dB -32.0 -29.0
-24.0
-20.0
-18.5
-17.5
-16.5
-15.5
Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50 *Bias Tee Data @ 100MHz
1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input.
Typical RF Performance - Broadband Application Circuit with VD=3V, ID=58mA
Parameter Unit 0.1 0.4 0.9 1.5 1.9 2.2 2.5 3.5
GHz* GHz GHz GHz GHz GHz GHz GHz
Small Signal Gain
dB 26.0
23.0
18.5
14.5
12.5
11.5
10.5
6.0
Noise Figure
dB 0.35
Output IP3
dBm
31.5
Output P1dB
dBm
18.8
Input Return Loss dB -8.0
0.44
33.0
18.9
-9.0
0.58
34.5
19.1
-13.0
0.65
36.0
19.4
-16.5
0.61
36.5
19.9
-18.5
0.69
37.0
20.2
-19.0
0.79
37.5
20.1
-19.0
1.25
37.0
18.9
-13.5
Output Return Loss
dB
-26.0
-28.5
-23.5
-18.0
-16.5
-16.0
-15.5
-9.0
Reverse Isolation
dB -31.0
-28.0
-23.0
-19.0
-17.5
-16.0
-15.0
-14.5
Test Conditions: VD=3V, IDQ=58mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50, *Bias Tee Data @ 100MHz
1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input.
3.8
GHz
7.0
1.27
41.5
22.9
-11.5
-15.5
-13.5
3.8
GHz
6.5
1.19
37.5
19.2
-10.0
-14.0
-12.5
2 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110408

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