DataSheet.in

SGL0363Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - LOW NOISE AMPLIFIER - RF Micro Devices

भाग संख्या SGL0363Z
समारोह LOW NOISE AMPLIFIER
मैन्युफैक्चरर्स RF Micro Devices 
लोगो RF Micro Devices लोगो 
पूर्व दर्शन
1 Page
		
<?=SGL0363Z?> डेटा पत्रक पीडीएफ

SGL0363Z pdf
SGL0363Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
Device Voltage (VD)
RF Input Power* (See Note)
20 mA
5.5 V
18 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
ESD-Rating, Human Body Model 1B Class
(HBM)
Moisture Sensitivity Level
1 MSL
*Note: Load condition1, ZL=50. Load condition2, ZL=10:1 VSWR.
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
DCIV over Temperature
8
7
6 25C
-40C
5
85C
4
Insertion Gain & Isolation
30
25
20
Gain
15
Max Gain
Isolation
-5
-10
-15
-20
3 10 -25
2
5 -30
1
0 0 -35
0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Vd (V)
Frequency (GHz)
2 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011

विन्यास 11 पेज
डाउनलोड[ SGL0363Z Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SGL0363ZLOW NOISE AMPLIFIERRF Micro Devices
RF Micro Devices


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English