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SGC4363Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - high performance SiGe HBT MMIC amplifier - RF Micro Devices

भाग संख्या SGC4363Z
समारोह high performance SiGe HBT MMIC amplifier
मैन्युफैक्चरर्स RF Micro Devices 
लोगो RF Micro Devices लोगो 
पूर्व दर्शन
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<?=SGC4363Z?> डेटा पत्रक पीडीएफ

SGC4363Z pdf
SGC4363Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ICE)
Device Voltage (VCE)
RF Input Power* (See Note)
110 mA
4V
12 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
*Note: Load condition ZL=50
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)
Parameter
Unit 100 500 850
MHz MHz MHz
Small Signal Gain (G)
dB 18.0 17.7 17.1
Output Third Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
Input Return Loss (IRL)
Output Return Loss (ORL)
dBm 33.5 30.5 28.5
dBm 14.9 14.0 13.3
dB 26.5 21.5 18.5
dB
25.0
21.0
17.5
Reverse Isolation (S12)
dB
20.0
21.0
Noise Figure (NF)
dB 2.9 3.1
Test Conditions: VD=3V ID=54mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm
TL=25°C ZS=ZL=50
21.5
3.5
Typical Performance with Bias Tee, VD=3V, ID=54mA
1950
MHz
12.7
26.5
12.4
13.5
12.5
20.0
4.0
2400
MHz
11.8
25.5
11.8
14.0
12.0
19.5
4.2
OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)
36
17
P1dB vs. Frequency
34
15
32
30 13
28
26
25C
24
-40C
22 85C
11
25C
-40C
9
85C
20
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
7
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
3500
MHz
9.4
22.5
10.0
12.0
11.0
19.0
5.1
3.5
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011

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