DataSheet.in

SGC-6489Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - high performance SiGe HBT MMIC amplifier - RF Micro Devices

भाग संख्या SGC-6489Z
समारोह high performance SiGe HBT MMIC amplifier
मैन्युफैक्चरर्स RF Micro Devices 
लोगो RF Micro Devices लोगो 
पूर्व दर्शन
1 Page
		
<?=SGC-6489Z?> डेटा पत्रक पीडीएफ

SGC-6489Z pdf
SGC-6489Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lCE)
Max Device Voltage (VCE)
Max RF Input Power* (See Note)
100 mA
7V
3 dBm
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
+150
-40 to +85
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 2
*Note: Load condition ZL = 50
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance at Key Operating Frequencies (Bias Tee Data)
Parameter
Unit 100 500 850 1950 2140
MHz MHz MHz MHz MHz
Small Signal Gain (G)
dB
23.1
22.7
22.2
19.5
19.0
Output Third Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
input Return Loss (IRL)
Output Return Loss (ORL)
dBm
dBm
dB
dB
35.1
21.8
37.0
23.0
34.3
20.9
22.0
22.0
34.1
20.6
19.0
19.0
32.8
19.2
18.0
11.0
32.7
19.0
18.0
11.0
Reverse Isolation (S12)
dB
25.0
25.0
26.0
25.0
25.0
Noise Figure (NF)
dB 1.8 2.0 2.1 2.4 2.4
Test Conditions: VD = 5V ID = 85mA OIP3 Tone Spacing = 1MHz, POUT per tone = 0dBm TL = 25°C ZS = ZL = 50
Typical Performance with Bias Tees, VD = 5V, ID = 82mA
2400
MHz
18.3
31.4
18.4
17.0
10.0
24.0
2.5
3500
MHz
15.7
27.4
15.2
16.0
8.0
22.0
2.9
OIP3 versus Frequency
P1dB versus Frequency
(0 dBm/tone, 1 MHz spacing)
36.0
25C
22.0
25C
-40C
-40C
34.0 85C 20.0 85C
32.0
30.0
28.0
18.0
16.0
26.0
14.0
24.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
12.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS120409

विन्यास 6 पेज
डाउनलोड[ SGC-6489Z Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SGC-6489Zhigh performance SiGe HBT MMIC amplifierRF Micro Devices
RF Micro Devices
SGC-6489Zhigh performance SiGe HBT MMIC amplifierRF Micro Devices
RF Micro Devices


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English