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SGC-6289Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - high performance SiGe HBT MMIC amplifier - RF Micro Devices

भाग संख्या SGC-6289Z
समारोह high performance SiGe HBT MMIC amplifier
मैन्युफैक्चरर्स RF Micro Devices 
लोगो RF Micro Devices लोगो 
पूर्व दर्शन
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SGC-6289Z pdf
SGC-6289Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lD)
Max Device Voltage (VD)
Max RF Input Power* (See Note)
100 mA
7V
10 dBm
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
+150
-40 to +85
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 2
*Note: Load condition ZL1 = 50
*Note: ZL2 = 10:1 VSWR
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance at Key Operating Frequencies (Application Circuit data unless otherwise noted)
Parameter
Unit 100 500 850 1950 2500 3500
MHz* MHz MHz MHz MHz MHz*
Small Signal Gain (G)
dB
15.0
14.0
14.0
13.5
13.2
12.5
Output Third Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
Input Return Loss (IRL)
dBm
dBm
dB
35.5
20.5
23.5
34.5
19.9
41.0
34.5
19.5
22.0
33.5
19.2
18.5
31.5
17.8
19.0
28.5
15.8
18.5
Output Return Loss (ORL)
dB
18.5
21.0
19.5
25.5
12.5
8.0
Reverse Isolation (S12)
Noise Figure (NF)
dB
18.0
18.5
18.5
19.5
19.5
19.9
dB 3.3 3.2 3.4 3.3 3.5 4.3
Test Conditions: VD = 5V ID = 83mA OIP3 Tone Spacing = 1MHz, POUT per tone = 0dBm TL = 25°C ZS = ZL = 50 *Bias Tee Data
Typical Performance with Bias Tees, VD = 5V, ID = 83mA
OIP3 versus Frequency (0 dBm tones)
38.0
-40°C
+25°C
36.0 +85°C
24
22
P1dB versus Frequency
-40°C
+25°C
+85°C
34.0
20
32.0
18
30.0
16
28.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
14
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS120409

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