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SGB2400 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER - RF Micro Devices

भाग संख्या SGB2400
समारोह DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER
मैन्युफैक्चरर्स RF Micro Devices 
लोगो RF Micro Devices लोगो 
पूर्व दर्शन
1 Page
		
<?=SGB2400?> डेटा पत्रक पीडीएफ

SGB2400 pdf
SGB2400
Absolute Maximum Ratings
Parameter
Total Current (ID)
Device Voltage (VD)
Power Dissipation
Operating Lead Temperature (TL)
RF Input Power
Storage Temperature Range
Rating
60
5
0.2
-40 to +85
20
-55 to +150
Unit
mA
V
W
°C
dBm
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operating Junction Temp (TJ)
ESD Rating - Human Body Model
(HBM)
+150
Class 1C
°C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the fol-
lowing expression: IDVD < (TJ - TL)/RTH, j-l
Typical Performance of SGB2433Z Packaged Part: VCC = 3V, ID = 25mA, T = 25°C, Z = 50
Parameter
Units 100MHz 500MHz 850MHz 1950MHz
Small Signal Gain
dB 19.7
19.5
19.1
17.2
Output 3rd Order Intercept Point (Note 1) dBm
20.0
19.5
18.0
Output Power at 1dB Compression
dBm
8.3 7.7
6.9
Input Return Loss
dB 25.0
19.9
17.1
13.4
Output Return Loss
dB 20.5
18.9
17.1
13.6
Reverse Isolation
dB 22.4
22.6
22.9
23.7
Noise Figure
dB 3.8 3.2 3.2
3.5
Note 1: OIP3 POUT/TONE = -10dBm with 1MHz tone spacing.
2400MHz
16.2
18.0
6.2
12.7
13.1
23.9
3.9
3500MHz
14.0
10.5
13.0
24.5
4.3
2 of 5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS120619

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अनुशंसा डेटापत्रक

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SGB2400DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIERRF Micro Devices
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