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SGA9189Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Medium Power Discrete SiGe Transistor - RF Micro Devices

भाग संख्या SGA9189Z
समारोह Medium Power Discrete SiGe Transistor
मैन्युफैक्चरर्स RF Micro Devices 
लोगो RF Micro Devices लोगो 
पूर्व दर्शन
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<?=SGA9189Z?> डेटा पत्रक पीडीएफ

SGA9189Z pdf
SGA9189Z
Absolute Maximum Ratings
Parameter
Max Base Current (IB)
Max Device Current (ICE)
Max Collector-Emitter Voltage (VCEO)
Max Collector-Base Voltage (VCBO)
Max Emitter-Base Voltage (VEBO)
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
Rating
5
200
7
20
4.8
+150
See Graph
+150
Unit
mA
mA
V
V
V
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
*Note: Load condition1, ZL = 50.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD
Typical Performance with Engineering Application Circuit
Freq VCE
ICQ P1dB OIP31 Gain S11
S22
NF
ZSOPT
(MHz) (V) (mA) (dBm) (dBm) (dB) (dB) (dB) (dB)
()
945
5
184
25.8
39.5
18.8
-14
-26
2.1 6.8 -j0.85
1960
5
179
25.5
40.0
12.2
-23
-21
2.4 7.6 - j11.2
2140
5
180
25.4
39.0
11.3
-20
-14
2.6 18.1 + j3.4
2440
5
180 25.4 40.0 10.2
-20
-17
2.7 5.6 - j15.1
1 POUT = +10dBm per tone for VCE = 5V, 1MHz tone spacing
ZLOPT
()
16 + j5.9
22.8 + j0.7
23.8 - j9.0
23.1 - j2.7
Typical Performance with Engineering Application Circuit
Freq VCE
ICQ P1dB OIP32 Gain S11
S22
NF
ZSOPT
(MHz) (V) (mA) (dBm) (dBm) (dB) (dB) (dB) (dB)
()
ZLOPT
()
945
3
165 22.1 34.3 17.7
-18
-11
2.1
9.6 - j1.6
11.0 + j1.4
1960
3
162
22.4
35.0
11.8
-18
-16
2.2
7.8 - j13.1
19.3 - j2.9
2440
3
165
23.2
35.3
9.9
-20
-15
2.6
8.1 - j16.0
21.0 - j6.5
2 POUT = +6dBm per tone for VCE = 3V, 1MHz tone spacing
Data above represents typical performance of the application circuits notes in Application Note AN-021. Refer to the applica-
tion note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing
instructions and other key issues to be considered. For the latest application notes please visit our site at wwww.RFMD.com or
call your local sales representative.
Maximum Recommended Operational
Dissipated Power
1.20
1.00
0.80
0.60
0.40
0.20
Operational Limit (Tj<130C)
0.00
-40
-10 20 50 80
Lead Temperature (C)
110 140
B
ZSOPT
C
ZLOPT
E
2 of 5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS121018

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SGA9189ZMedium Power Discrete SiGe TransistorRF Micro Devices
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