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SZM-2066Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2W POWER AMPLIFIER - RF Micro Devices

भाग संख्या SZM-2066Z
समारोह 2W POWER AMPLIFIER
मैन्युफैक्चरर्स RF Micro Devices 
लोगो RF Micro Devices लोगो 
पूर्व दर्शन
1 Page
		
<?=SZM-2066Z?> डेटा पत्रक पीडीएफ

SZM-2066Z pdf
SZM-2066Z
Absolute Maximum Ratings
Parameter
Rating
Unit
VC3 Collector Bias Current (IVC3)
VC2 Collector Bias Current (IVC2)
VC1 Collector Bias Current (IVC1)
****Device Voltage (VD)
Power Dissipation
1500
500
150
9.0
6
mA
mA
mA
V
W
***Max CW RF output Power for
50W continuous long term oper-
ation
30
dBm
Max CW RF output Power for 5026 dBm
output load
Max CW RF Input Power for 10:1
VSWR out load
5 dBm
Storage Temperature Range
-40 to +150
°C
Operating Temp Range (TL)
Operating Junction Temperature (TJ)
ESD Rating - Human Body Model
-40 to +85
+150
1000
°C
°C
V
***With specified application circuit
****No RF Drive
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance with appropriate app circuit (VCC=5V, ICQ=583mA, *802.11g 54Mb/s 64QAM)
Parameter
Unit **2.4 2.5
GHz GHz
Gain @ POUT=26dBm
P1dB
dB 37.5 36.9
dBm
34.6
33.5
POUT @ 2.5% EVM*
Current @ POUT 2.5% EVM*
Input Return Loss
Output Return Loss
Step Attentuation (VPC2=0V)
Test Conditions: **Measured with 2.4GHz to 2.5GHz Application circuit.
dBm 27.0 26.0
mA 703 710
dB
-12.1
-11.5
dB -27 -15.6
dB 27 27
Simplified Device Schematic
2.6
GHz
36.5
33.5
26.0
700
-10.8
-28
26
2.7
GHz
34.6
33.9
26.5
712
-10.5
-18.5
25
2 of 18
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110620

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