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SMS840 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement MOSFET - SeCoS

भाग संख्या SMS840
समारोह P-Channel Enhancement MOSFET
मैन्युफैक्चरर्स SeCoS 
लोगो SeCoS लोगो 
पूर्व दर्शन
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<?=SMS840?> डेटा पत्रक पीडीएफ

SMS840 pdf
Elektronische Bauelemente
SMS840
0.13A , 50V , RDS(ON) 10
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Static Characteristics 1
Teat Conditions
Drain-Source Breakdown Voltage
BVDSS -50 - - V VGS =0, ID = -250µA
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
- - -0.1
VGS=0, VDS = -25V
IDSS
µA
- - -15
VGS=0, VDS = -50V
IGSS - - ±60 µA VGS=±20V, VDS =0
Gate-Source Threshold Voltage
VGS(th)
-0.8
-
-2
V VDS =VGS, ID = -1mA
Static Drain-Source On Resistance
RDS(ON) - 5 10 VGS= -5V, ID = -0.1A
Forward Transconductance
gFS
50 -
-
Dynamic Characteristics
mS VDS= -25V,,ID = -0.1A, f=1.0KHz
Input Capacitance
Output Capacitance
Ciss - 30 -
Coss - 10 - pF VDS= -5V, VGS=0, f=1MHz
Reverse Transfer Capacitance
Crss - 5 -
Switching Characteristics 2
Turn-On Delay Time
Td(ON)
- 25 -
Turn-Off Delay Time
Rise Time
Td(OFF)
Tr
-
-
16
1
-
-
nS
VDD= -15V, ,ID= -2.5A,
RL=50,
Fall Time
Tf - 8 -
Gate Charge
QT
- 6000 -
pC
Source-Drain Diode Characteristics
Continuous Current
IS - -
Pulsed Current
ISM - -
Forward Voltage 2
VSD - -2.5
Notes:
1. Pulse Test : PW300us, Duty Cycle2%.
2. Switching Time is Essentially Independent of Operating Temperature.
0.13
0.52
-
A
V
http://www.SeCoSGmbH.com/
25-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4

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डाउनलोड[ SMS840 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SMS840P-Channel Enhancement MOSFETSeCoS
SeCoS


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